Voltage-controlled magnetic anisotropic magnetic random access memory and storage state determining method therefor
US11127447B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2018 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a voltage-controlled magnetic anisotropic magnetic random access memory. The memory comprises a virtual array, a memory array and a peripheral circuit, wherein the memory array comprises memory cells with X rows and Y columns; the virtual array comprises virtual cells with X rows and one column; the peripheral circuit comprises at least one data sampling-decision-output circuit, the data sampling-decision-output circuit comprises a sensitive amplifier circuit and a logic circuit in series, and are simultaneously connected to the data sampling-decision-output circuit in the peripheral circuit at the same time. By changing the width-length ratio of a differential circuit in the sensitive amplifier circuit and adding the virtual array, the problem that the storage state of the voltage-controlled magnetic anisotropy magnetic random access memory cannot be determined is effectively solved, and the risk of resistance deviation under different process conditions also can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.