Structure and formation method of semiconductor device with fin structures

US11127639B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Zhen Geng · Hsinchu, TW
• Kitchun Kwong · Hsinchu, TW
• Taicheng Shieh · Hsinchu, TW
• Bo-Shiuan Shie · Hsinchu, TW
• Po-Nien Chen · Banluliao, TW
• Chih-Yung Lin · Hengshan, TW

Key dates

• Filing date: Aug 22, 2019
• Grant date: Sep 21, 2021
• Expiry date: Aug 22, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B10/18

Abstract

A structure and formation method of a semiconductor device is provided. The method includes forming a first, a second, a third, and a fourth fin structures over a substrate. The method also includes forming a first spacer layer over sidewalls of the first and the second fin structures. The method further includes forming a second spacer layer over the first spacer layer and sidewalls of the third and the fourth fin structures. In addition, the method includes forming a first blocking fin between the first and the second fin structures. The first blocking fin is separated from the first fin structure by portions of the first spacer layer and the second spacer layer. The method includes forming a second blocking fin between the third and the fourth fin structures. The second blocking fin is separated from the third fin structure by a portion of the second spacer layer.