MRAM, method of manufacturing the same, and electronic device including the MRAM

US11127783B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huilong Zhu · Poughkeepsie, US
• Junjie Li · Hangzhou City, CN
• Chao Zhao · Thuwal, SA

Key dates

• Filing date: Nov 1, 2018
• Grant date: Sep 21, 2021
• Expiry date: Nov 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.