Gate structures
US11127834B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Oct 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The method includes: forming a first gate structure and a second gate structure with gate materials; etching the gate materials within the second gate structure to form a trench; and depositing a conductive material within the trench so that the second gate structure has a metal composition different than the first gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.