Method for manufacturing at least one passivated planar photodiode with reduced dark current
US11127875B2 · kind B2 · utility
1Cited by
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14Claims
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Key dates
| Filing date | Nov 19, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Nov 19, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.