Light-emitting diode

US11127879B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Daqian YE · Tianjin, CN
• Dongyan Zhang · Tianjin, CN
• Chaoyu WU · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Nov 7, 2019
• Grant date: Sep 21, 2021
• Expiry date: Nov 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

Disclosed herein is a light emitting diode (LED), which includes a first-type semiconductor unit, an active layer formed on the first-type semiconductor unit, and a second-type semiconductor unit formed on the active layer oppositely of the first-type semiconductor unit. The second-type semiconductor unit includes a hole storage structure that has a polarization field having a direction pointing toward the active layer.