Optoelectronic device with light-emitting diode with extraction enhancement

US11127884B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• François Templier · Grenoble, FR
• Salim Boutami · Grenoble, FR

Key dates

• Filing date: Nov 30, 2017
• Grant date: Sep 21, 2021
• Expiry date: Nov 30, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882

Abstract

An optoelectronic device including an active area capable of supplying an electromagnetic radiation and sandwiched between first and second semiconductor layers, the first semiconductor layer delimiting a surface, the optoelectronic device further including a diffraction grating capable of extracting the electromagnetic radiation from the first semiconductor layer, the diffraction grating including holes extending in the first semiconductor layer from said surface, the width of the holes measured in a plane parallel to said surface increasing from a central portion of the diffraction grating to a peripheral portion of the diffraction grating.