Semiconductor light emitting device with reflective side coating
US11127887B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2016 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Jul 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/854
Abstract
A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.