Patent · US Active

Multi-layer silicon nitride waveguide based integrated photonics optical gyroscope chip

US11131545B2 · kind B2 · utility

2Cited by
3References
25Claims
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Key dates

Filing dateNov 11, 2020
Grant dateSep 28, 2021
Priority date—
Expiry dateNov 11, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12138
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An integrated photonics optical gyroscope fabricated on a silicon nitride (SiN) waveguide platform comprises a first portion with silicon nitride (SiN) waveguides that constitute a rotation sensing element; and, a second portion with additional silicon nitride (SiN) waveguide-based optical components that constitute a front-end chip to launch light into and receive light from the rotation sensing element. The two portions can be stacked together to have a multi-layer configuration vertically coupled with each other. External elements (e.g., laser, detectors, phase shifter) may be made of different material platform than SiN and can be hybridly integrated to the SiN waveguide platform.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.