Thin-film structure and method of manufacturing the same
US11133179B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Nov 27, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Dec 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.