CMP apparatus and method for estimating film thickness
US11133231B2 · kind B2 · utility
0Cited by
9References
20Claims
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Key dates
| Filing date | Mar 27, 2018 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Jul 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for estimating film thickness in CMP includes the following operations. A substrate with a film formed thereon is disposed over a polishing pad with a slurry dispensed between the film and the polishing pad. A CMP operation is performed to reduce a thickness of the film. An in-situ electrochemical impedance spectroscopy (EIS) measurement is performed during the CMP operation by an EIS device to estimate the thickness of the film real-time. The CMP operation is ended when the estimated thickness of the film obtained from the fit parameters of the first equivalent electrical circuit model reaches a target thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.