Thin film transistor and fabricating method thereof, array substrate and display device
US11133367B2 · kind B2 · utility
1Cited by
4References
13Claims
0Family size
Assignee
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Key dates
| Filing date | May 21, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | May 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes: a substrate base; a first gate electrode at a side of the substrate base; an active layer at a side of the first gate electrode away from the substrate base; a second gate electrode at a side of the active layer away from the substrate base; and a source/drain electrode at a side of the second gate electrode away from the substrate base. An orthographic projection of the source/drain electrode on the substrate base is at least partially overlapped with an orthographic projection of the second gate electrode on the substrate base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.