Silicon-germanium heterostructures with quantum wells having oscillatory germanium concentration profiles for increased valley splitting
US11133388B1 · kind B1 · utility
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Key dates
| Filing date | Jul 23, 2020 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Jul 23, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor heterostructures, methods of making the heterostructures, and quantum dots and quantum computation devices based on the heterostructures are provided. The heterostructures include a quantum well of strained silicon seeded with a relatively low concentration of germanium impurities disposed between two quantum barriers of germanium or a silicon-germanium alloy. The quantum wells are characterized in that the germanium concentration in the wells has an oscillating profile that increases the valley splitting in the conduction band of the silicon quantum well.
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