Semiconductor device
US11133392B2 · kind B2 · utility
0Cited by
18References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Jan 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
Abstract
Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.