Ballistic field-effect transistors based on Bloch resonance and methods of operating a transistor
US11133409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Nov 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a source, a drain, and a channel electrically connected to the source and the drain. The channel has a channel length from the drain to the source which is less than or equal to an electron mean free path of the channel material. A first gate has two arms, each extending between the drain and the source (i.e., at least a portion of the distance between the source and the drain). Each arm of the first gate is disposed proximate to a corresponding first and second edge of the channel. Each arm of the first gate has a periodic profile along an inner boundary, wherein the periodic profiles of each arm are offset from each other such that a distance between the arms is constant. A Bloch voltage applied to the first gate will reduce the effective channel with such that Bloch resonance conditions are met.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.