Semiconductor device having low Rdson and manufacturing method thereof
US11133414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2020 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Apr 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
A semiconductor device includes a substrate, a first P-type well region and a second P-type well region disposed in the substrate, wherein the first P-type well region and the second P-type well region are spaced apart from each other, an N-type source region disposed in the substrate, wherein the N-type source region is disposed spaced apart from the second P-type well region, an N-type drain region disposed in the second P-type well region, an N-type LDD region disposed near the N-type drain region, and a gate insulating layer and a gate electrode on the substrate, wherein the gate electrode partially overlaps the second P-type well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.