Patent · US Active

Transistors with a sectioned epitaxial semiconductor layer

US11133417B1 · kind B1 · utility

1Cited by

0References

20Claims

0Family size

Assignee

GLOBALFOUNDRIES U.S. Inc. · US

Inventors

Sipeng Gu · Clifton Park, US
Judson R. Holt · Wappingers Falls, US
Halting Wang · Clifton Park, US

Key dates

Filing date	Mar 16, 2020
Grant date	Sep 28, 2021
Priority date	—
Expiry date	Mar 16, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/687
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body, a second gate structure that extends over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first section and a second section. The second semiconductor layer is positioned laterally between the first section of the first semiconductor layer and the second section of the first semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.