Semiconductor device and method for manufacturing semiconductor device
US11133420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2018 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Dec 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/70
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with high on-state current is provided. The semiconductor device including a first oxide; a first conductor and a second conductor that are positioned over the first oxide; a third conductor positioned to cover the first conductor; a fourth conductor positioned to cover the second conductor; a first insulator having an opening overlapping with a region between the third conductor and the fourth conductor; a fifth conductor positioned in the opening; a second insulator positioned between the fifth conductor, and the first oxide and the first insulator; a second oxide positioned between the second insulator, and the first oxide and the first insulator; and a third insulator that is positioned between the second oxide, and the third conductor and the fourth conductor, and the first insulator and does not overlap with the first oxide in the region sandwiched between the third conductor and the fourth conductor, where the third conductor and the fourth conductor each have a region overlapping with the fifth conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.