Optoelectronic device with light-emitting diode with extraction enhancement

US11133437B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• François Templier · Grenoble, FR
• Salim Boutami · Grenoble, FR

Key dates

• Filing date: Nov 30, 2017
• Grant date: Sep 28, 2021
• Expiry date: Nov 30, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/872

Abstract

An optoelectronic device including an active area capable of supplying an electromagnetic radiation and sandwiched between first and second semiconductor layers, the first semiconductor layer delimiting a surface and including a first portion in contact with the active area and delimiting a first part of the surface and extending in a second portion delimiting a second part of the surface, the second portion forming a single-mode waveguide, the optoelectronic device including an opaque portion reflective for the electromagnetic radiation covering the first part and including a diffraction grating on the second part capable of extracting the electromagnetic radiation from the second portion.