Patent · US Active

LEDs with efficient electrode structures

US11133440B2 · kind B2 · utility

0Cited by
3References
22Claims
0Family size

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Key dates

Filing dateAug 6, 2020
Grant dateSep 28, 2021
Priority date
Expiry dateAug 6, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.