Magnetic element, magnetic memory device, and magnetic sensor
US11133459B2 · kind B2 · utility
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1References
13Claims
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Key dates
| Filing date | Feb 15, 2018 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Mar 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.