Nitride semiconductor laser device and semiconductor laser apparatus
US11133651B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Nov 26, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Jan 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.