Acoustic wave device
US11133790B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2020 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Mar 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/25
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a piezoelectric substrate with a reverse-velocity surface having an ellipse shape, an IDT electrode on the piezoelectric substrate, and a dielectric film on the piezoelectric substrate and covering the IDT electrode. The acoustic wave device utilizes a Love wave. The IDT electrode includes an intersecting region in which first electrode fingers and second electrode fingers are interdigitated. The intersecting region includes a central region, a first edge region and a second edge region located at both ends of the central region. When x (%) denotes a wavelength-normalized film thickness of the IDT electrode and y (g/cm3) denotes an electrode density of the IDT electrode, the wavelength-normalized film x is set at a value not less than x that satisfies Equation 1. The film thicknesses of the dielectric films in the first and second edge regions are smaller than the dielectric film in the central region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.