Bootstrap circuit for gate driver
US11133797B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 24, 2020 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Nov 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A bootstrap diode circuit includes an anode for coupling to a power supply voltage terminal and a cathode for coupling to a bootstrap voltage terminal. The bootstrap diode circuit also includes a high-voltage p-type metal-oxide-semiconductor (PMOS) transistor, having a source forming the cathode of the bootstrap diode circuit and a drain forming the anode of the bootstrap diode circuit. The high-voltage PMOS transistor has a breakdown voltage higher in magnitude than a voltage drop between a maximum bootstrap voltage and the power supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.