High isolation radio frequency switch
US11133836B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 2020 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Jul 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) switch circuit is provided. The switch includes a branch configured and arranged to transfer an RF signal coupled at an input node to an output node when a control signal is at a first logic value. A first transistor in the branch includes a first current electrode coupled at the input node and a second current electrode coupled to an intermediate node. The first transistor is formed in a first isolation well coupled to a bias voltage supply terminal. A second transistor in the branch includes a first current electrode coupled to the second current electrode of the first transistor at the intermediate node and a second current electrode coupled at the output node. The second transistor is formed in a second isolation well coupled to the bias voltage supply terminal. A third transistor includes a first current electrode coupled at the first intermediate node and a second current electrode coupled at a first supply terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.