Plastic semiconductor material and preparation method thereof

US11136692B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xun Shi · Nanhu, CN
• Ruiheng LIU · Shanghai, CN
• Feng Hao · Milpitas, US
• Tuo Wang · North York, CA

Key dates

• Filing date: Feb 12, 2018
• Grant date: Oct 5, 2021
• Expiry date: Feb 12, 2038

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2235/79
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag2-δXδS1-ηYη(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.