Raman spectroscopy method for simultaneously measuring temperature and thermal stress of two-dimensional film material in situ
US11137245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2020 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Jun 30, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a Raman spectroscopy method for simultaneously measuring a temperature and a thermal stress of a two-dimensional film material in situ. The method includes: providing the two-dimensional film material including a suspended part and a supported part and measuring Raman signals of the suspended part and the supported part; establishing equations of a Raman shift with temperature and a Raman shift with thermal stress for each of the suspended part and the supported part, and solving simultaneous equations to obtain coefficients with temperature and thermal stress; and scanning a characteristic Raman spectrum field of the two-dimensional film material and obtaining a temperature distribution and a thermal stress distribution of the two-dimensional film material according to the characteristic Raman spectrum field in combination of the coefficients of the Raman shift with temperature and the Raman shift with thermal stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.