Multilayer thin-film structure and phase shifting device using the same
US11137661B2 · kind B2 · utility
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2References
30Claims
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Key dates
| Filing date | May 8, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Nov 11, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.