Organoaminosilane precursors and methods for depositing films comprising same
US11139162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Sep 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.