Bypass thyristor device with gas expansion cavity within a contact plate
US11139219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2020 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | May 22, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bypass thyristor device includes a semiconductor device providing a thyristor with a cathode electrode on a cathode side, a gate electrode on the cathode side surrounded by the cathode electrode and an anode electrode on an anode side; an electrically conducting cover element arranged on the cathode side and in electrical contact with the cathode electrode on a contact side; and a gate contact element electrically connected to the gate electrode and arranged in a gate contact opening in the contact side of the cover element; wherein the cover element has a gas expansion volume in the contact side facing the cathode side, which gas expansion volume is interconnected with the gate contact opening for gas exchange.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.