Light emitting device
US11139280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Dec 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/0756
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a solid-state light-emitting device that comprises at least two light-emitting layers comprising a transition metal dichalcolgenide material with embedded nanoparticles arranged to form an allowable energy level within the bandgap of the transition metal dichalcolgenide layer; the at least two light-emitting layers being sandwiched between two layers of a material with a bandgap larger than the transition metal dichalcolgenide material; and the at least two light-emitting layers being arranged one above the other in a manner such that, light emitted by one of the light-emitting layers travels across the other one of the light-emitting layers; and electrodes arranged to apply a voltage across the two layers of a material with a bandgap larger than the transition metal dichalcolgenide material; wherein, when a voltage within a predetermined range is applied to a pair of electrodes, photons with a predetermined wavelength are emitted by one or more of the at least two light-emitting layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.