Silicon-controlled-rectifier electrostatic protection structure and fabrication method thereof

US11139288B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Guang Chen · Tangxia, CN
• Jie Chen · Shanghai, CN

Key dates

• Filing date: Mar 18, 2020
• Grant date: Oct 5, 2021
• Expiry date: Apr 8, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/80

Abstract

A silicon-controlled-rectifier electrostatic protection structure and a fabrication method are provided. The structure includes: a substrate of P-type; a first N-type well; a second N-type well; a third N-type well; an anode P-type doped region in the first N-type well; second N-type doped regions at sides of the first N-type well; first P-type doped regions at sides of the first N-type well; third N-type doped regions at sides of the first N-type well; gate structures and fourth N-type doped regions at the sides of the first N-type well; and fifth N-type doped regions at the sides of the first N-type well. The fourth N-type doped regions and the third N-type doped regions are disposed at sides of each of the gate structures along a first direction respectively.