Semiconductor device including different nitride regions and method for manufacturing same
US11139393B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 12, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Nov 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1-x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1-x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1-x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.