Thin film transistor and method of manufacturing the same and thin film transistor array panel and electronic device
US11139440B2 · kind B2 · utility
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3References
34Claims
0Family size
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Key dates
| Filing date | Jan 21, 2020 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Jan 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6576
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.