Resist composition
US11143961B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2016 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Dec 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/303
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to resist compostions, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.