Patent · US Active

Method of forming gallium nitride film over SOI substrate

US11145507B2 · kind B2 · utility

0Cited by
5References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 16, 2019
Grant dateOct 12, 2021
Priority date—
Expiry dateMar 17, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3083
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of forming a GaN film includes following steps. A silicon-on-insulator (SOI) substrate is provided. The SOI substrate includes a substrate, an insulator layer and a silicon layer. The insulator layer is disposed on the substrate and the silicon layer is disposed on the insulator layer. The silicon layer is pattered into a patterned silicon layer including a plurality of recessed features. Each recessed feature has a sidewall. A plurality of GaN structures are epitaxially grown from the sidewalls, and the GaN structures are separated from each other. The GaN structures are continuously epitaxially grown vertically and horizontally to merge the GaN structures over top of the patterned silicon layer to form a GaN layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.