Semiconductor device including a capacitor
US11145709B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Jun 12, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Jun 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
Abstract
A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.