Ohmic alloy contact region sealing layer
US11145735B2 · kind B2 · utility
0Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Oct 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.