Patent · US Active

Bipolar transistor

US11145741B2 · kind B2 · utility

0Cited by

7References

32Claims

0Family size

Assignees

STMicroelectronics (Crolles 2) SAS · FR
STMicroelectronics SA

Inventors

Alexis Gauthier · Meylan, FR
Pascal Chevalier · Bellecombe, FR

Key dates

Filing date	Oct 2, 2019
Grant date	Oct 12, 2021
Priority date	—
Expiry date	Nov 1, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D10/821
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.