Germanium photodiode

US11145779B2 · kind B2 · utility

Assignee

• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Charles Baudot · Lumbin, FR
• Sebastien Cremer · Hameau du Château, FR
• Nathalie Vulliet · Crolles, FR
• Denis Pellissier-Tanon · Grenoble, FR

Key dates

• Filing date: Mar 6, 2019
• Grant date: Oct 12, 2021
• Expiry date: Jun 21, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.