Methods for wafer-to-wafer bonding
US11145786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Oct 10, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2027/0187
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein are techniques for wafer-to-wafer bonding for manufacturing light emitting diodes (LEDs). In some embodiments, a method of manufacturing LEDs includes modifying a p-type layer of a semiconductor material to form a plurality of alternating high resistivity areas and low resistivity areas, wherein the low resistivity areas correspond to light emitters; bonding a base wafer to a first surface of the p-type layer; removing a substrate from a second surface of the semiconductor material, wherein the second surface of the semiconductor material is opposite to the first surface of the p-type layer; and patterning a trench between each adjacent pair of the light emitters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.