Patent · US Active

Light-emitting device

US11145789B2 · kind B2 · utility

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19Claims
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Assignee

Inventors

Key dates

Filing dateNov 4, 2019
Grant dateOct 12, 2021
Priority date
Expiry dateNov 4, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8162

Abstract

A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.