Light-emitting device

US11145791B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Shih-Chang Lee
• Meng-Yang Chen · Hsinchu, TW

Key dates

• Filing date: Dec 23, 2019
• Grant date: Oct 12, 2021
• Expiry date: Dec 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162

Abstract

A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure and has a first dopant. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer has the first dopant with a first doping concentration decreasing along a depth direction from the second semiconductor structure to the first semiconductor structure.