Nano memory device
US11145815B2 · kind B2 · utility
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4References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 11, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Mar 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/881
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly reduced amount of carbon nanotube loading located between the first and second terminal, wherein the nano-grease exhibits non-volatile memory characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.