Process for etching, and chamber cleaning and a gas therefor

US11149347B2 · kind B2 · utility

Assignees

• SOLVAY SA · BE
• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Michael Pittroff · Hannover, DE
• Robert Wieland · Munich, DE
• Jamila Boudaden · Munich, DE

Key dates

• Filing date: May 4, 2016
• Grant date: Oct 19, 2021
• Expiry date: Jun 6, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

The present invention relates to a process for cleaning chambers of apparatus used for semiconductor manufacturing with a gas mixture comprising or consisting of fluorine, nitrogen and argon as well as said gas mixtures.