Saw assisted facet etch dicing
US11150409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2019 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Jun 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dicing system and methods may include a novel way to separate die on a wafer in preparation for packaging that results in smooth diced edges. This is specifically advantageous, but not limited to, edge-coupled photonic chips. This method etches from the front side of the wafer and dices from the back side of the wafer to create a complete separation of die. It creates an optically smooth surface on the front side of the wafer at the location of the optical device (waveguides or other) which enables direct mounting of adjacent devices with low coupling loss and low optical scattering. The backside dicing may be wider than the front side etch, so as to recess this sawed surface and prevent it from protruding outward, resulting in rough surfaces inhibiting a direct joining of adjacent devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.