Semiconductor structure and method for fabricating the same
US11152253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2020 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Feb 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5222
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method of fabricating the same is disclosed. The structure comprises: a substrate having a device region; a contact plug arranged over the device region and enables electrical connection to a semiconductor device in the device region; a separation layer arranged above and exposing the contact plug; a cylindrical tubular metal feature arranged above the separation layer; and a dielectric layer laterally surrounding the cylindrical tubular conductive feature, having a substantially stepped dopant concentration distribution comprised of two distinct dopant species. The dopant concentration level decreases from a lower region nearest the separation layer toward an upper region farther from the separation layer. An inter-dopant ratio between the distinct dopant species increases from the lower region toward the upper region. The cylindrical tubular metal feature has a sidewall profile that is substantially perpendicular to a surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.