Cut metal gate devices and processes
US11152262B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 12, 2019 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Nov 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes etching a gate structure to form a trench extending into the gate structure, wherein sidewalls of the trench comprise a metal oxide material, applying a sidewall treatment process to the sidewalls of the trench, wherein the metal oxide material has been removed as a result of applying the sidewall treatment process and filling the trench with a first dielectric material to form a dielectric region, wherein the dielectric region is in contact with the sidewall of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.