Semiconductor device and method for manufacturing semiconductor device
US11152275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Sep 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first insulating resin member sealing a mounting surface of a lead frame, and a second insulating resin member sealing a heat dissipating surface. The second insulating resin member contains a filler having a maximum diameter of 0.02 mm to 0.075 mm. The second insulating resin member includes a thin molded portion formed in contact with the heat dissipating surface of the lead frame. The thin molded portion has a thickness 1.1 times to 2 times the maximum diameter of the filler. The semiconductor device includes, at an interface between the first insulating resin member and the second insulating resin member, a mixture layer in which these resins are mixed with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.