Integrated circuit device and a method of manufacturing the same
US11152359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2020 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Jul 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
Abstract
An integrated circuit device includes: a substrate including a fin type active region extending in a first direction; a gate structure intersecting the fin type active region and extending in a second direction perpendicular to the first direction; a source/drain region on sides of the gate structure; a gate isolation insulating layer contacting an end of the gate structure; a first contact connected to the source/drain region; and a second contact connected to the source/drain region, the second contact being longer in the second direction than the first contact, the second contact includes a first portion extending in the second direction from an area adjacent to one side of the gate structure beyond the end of the gate structure and facing a sidewall of the gate structure, and a second portion facing a sidewall of the gate isolation insulating layer, and the first portion is wider than the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.